Properties of NiO thin films deposited by chemical spray pyrolysis using different precursor solutions
Identifieur interne : 000166 ( France/Analysis ); précédent : 000165; suivant : 000167Properties of NiO thin films deposited by chemical spray pyrolysis using different precursor solutions
Auteurs : L. Cattin [France] ; B. A. Reguig [Algérie] ; A. Khelil [Algérie] ; M. Morsli [France] ; K. Benchouk [Algérie] ; J. C. Bernede [France]Source :
- Applied surface science [ 0169-4332 ] ; 2008.
Descripteurs français
- Pascal (Inist)
- Wicri :
- topic : Aérosol.
English descriptors
- KwdEn :
Abstract
NiO thin films have been deposited by chemical spray pyrolysis using a perfume atomizer to grow the aerosol. The influence of the precursor, nickel chloride hexahydrate [NiCl2.6H2O), nickel nitrate hexahydrate [Ni[NO3)2.6H2O), nickel hydroxide hexahydrate [Ni[OH)2.6H2O), nickel sulfate tetrahydrate [NiSO4.4H2O), on the thin films properties has been studied. In the experimental conditions used (substrate temperature 350 °C, precursor concentration 0.2-0.3 M, etc.), pure NiO thin films crystallized in the cubic phase can be achieved only with NiCl2 and Ni[NO3)2 precursors. These films have been post-annealed at 425 °C for 3 h either in room atmosphere or under vacuum. If all the films are p-type, it is shown that the NiO films conductivity and optical transmittance depend on annealing process. The properties of the NiO thin films annealed under room atmosphere are not significantly modified, which is attributed to the fact that the temperature and the environment of this annealing is not very different from the experimental conditions during spray deposition. The annealing under vacuum is more efficient. This annealing being proceeded in a vacuum no better than 10-2 Pa, it is supposed that the modifications of the NiO thin film properties, mainly the conductivity and optical transmission, are related to some interaction between residual oxygen and the films.
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Cattin</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Université de Nantes, Nantes Atlantique Universités, LAMP, EA 3825, Faculté des Sciences et des Techniques, 2 rue de la Houssinière, BP 92208</s1><s2>Nantes 44000</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Pays de la Loire</region></placeName><orgName type="university">Université de Nantes</orgName></affiliation></author><author><name sortKey="Reguig, B A" sort="Reguig, B A" uniqKey="Reguig B" first="B. A." last="Reguig">B. A. Reguig</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Université d'Oran Es-Senia, LPCM2E</s1><s3>DZA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Algérie</country><wicri:noRegion>Université d'Oran Es-Senia, LPCM2E</wicri:noRegion></affiliation></author><author><name sortKey="Khelil, A" sort="Khelil, A" uniqKey="Khelil A" first="A." last="Khelil">A. Khelil</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Université d'Oran Es-Senia, LPCM2E</s1><s3>DZA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Algérie</country><wicri:noRegion>Université d'Oran Es-Senia, LPCM2E</wicri:noRegion></affiliation></author><author><name sortKey="Morsli, M" sort="Morsli, M" uniqKey="Morsli M" first="M." last="Morsli">M. Morsli</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Université de Nantes, Nantes Atlantique Universités, LAMP, EA 3825, Faculté des Sciences et des Techniques, 2 rue de la Houssinière, BP 92208</s1><s2>Nantes 44000</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Pays de la Loire</region></placeName><orgName type="university">Université de Nantes</orgName></affiliation></author><author><name sortKey="Benchouk, K" sort="Benchouk, K" uniqKey="Benchouk K" first="K." last="Benchouk">K. 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Bernede</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Université de Nantes, Nantes Atlantique Universités, LAMP, EA 3825, Faculté des Sciences et des Techniques, 2 rue de la Houssinière, BP 92208</s1><s2>Nantes 44000</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Pays de la Loire</region></placeName><orgName type="university">Université de Nantes</orgName></affiliation></author></analytic><series><title level="j" type="main">Applied surface science</title><title level="j" type="abbreviated">Appl. surf. sci.</title><idno type="ISSN">0169-4332</idno><imprint><date when="2008">2008</date></imprint></series></biblStruct></sourceDesc><seriesStmt><title level="j" type="main">Applied surface science</title><title level="j" type="abbreviated">Appl. surf. sci.</title><idno type="ISSN">0169-4332</idno></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption spectra</term><term>Aerosols</term><term>Annealing</term><term>Electrical conductivity</term><term>Nickel oxide</term><term>Precursor</term><term>Pyrolysis</term><term>Surface structure</term><term>Thin films</term><term>Transmittance</term><term>p type semiconductor</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Oxyde de nickel</term><term>Couche mince</term><term>Pyrolyse</term><term>Structure surface</term><term>Précurseur</term><term>Recuit</term><term>Semiconducteur type p</term><term>Facteur transmission</term><term>Spectre absorption</term><term>Aérosol</term><term>Conductivité électrique</term><term>Ni O</term><term>NiO</term><term>8115R</term><term>7820C</term><term>6855J</term><term>7361</term></keywords><keywords scheme="Wicri" type="topic" xml:lang="fr"><term>Aérosol</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">NiO thin films have been deposited by chemical spray pyrolysis using a perfume atomizer to grow the aerosol. The influence of the precursor, nickel chloride hexahydrate [NiCl<sub>2</sub>.6H<sub>2</sub>O), nickel nitrate hexahydrate [Ni[NO<sub>3</sub>)<sub>2</sub>.6H<sub>2</sub>O), nickel hydroxide hexahydrate [Ni[OH)<sub>2</sub>.6H<sub>2</sub>O), nickel sulfate tetrahydrate [NiSO<sub>4</sub>.4H<sub>2</sub>O), on the thin films properties has been studied. In the experimental conditions used (substrate temperature 350 °C, precursor concentration 0.2-0.3 M, etc.), pure NiO thin films crystallized in the cubic phase can be achieved only with NiCl<sub>2</sub> and Ni[NO<sub>3</sub>)<sub>2</sub> precursors. These films have been post-annealed at 425 °C for 3 h either in room atmosphere or under vacuum. If all the films are p-type, it is shown that the NiO films conductivity and optical transmittance depend on annealing process. The properties of the NiO thin films annealed under room atmosphere are not significantly modified, which is attributed to the fact that the temperature and the environment of this annealing is not very different from the experimental conditions during spray deposition. The annealing under vacuum is more efficient. This annealing being proceeded in a vacuum no better than 10<sup>-2</sup> Pa, it is supposed that the modifications of the NiO thin film properties, mainly the conductivity and optical transmission, are related to some interaction between residual oxygen and the films.</div></front></TEI><affiliations><list><country><li>Algérie</li><li>France</li></country><region><li>Pays de la Loire</li></region><orgName><li>Université de Nantes</li></orgName></list><tree><country name="France"><region name="Pays de la Loire"><name sortKey="Cattin, L" sort="Cattin, L" uniqKey="Cattin L" first="L." last="Cattin">L. Cattin</name></region><name sortKey="Bernede, J C" sort="Bernede, J C" uniqKey="Bernede J" first="J. C." last="Bernede">J. C. Bernede</name><name sortKey="Morsli, M" sort="Morsli, M" uniqKey="Morsli M" first="M." last="Morsli">M. Morsli</name></country><country name="Algérie"><noRegion><name sortKey="Reguig, B A" sort="Reguig, B A" uniqKey="Reguig B" first="B. A." last="Reguig">B. A. Reguig</name></noRegion><name sortKey="Benchouk, K" sort="Benchouk, K" uniqKey="Benchouk K" first="K." last="Benchouk">K. Benchouk</name><name sortKey="Khelil, A" sort="Khelil, A" uniqKey="Khelil A" first="A." last="Khelil">A. Khelil</name></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
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